China achieves important breakthrough in UV LED lighting and application research

　　Through continuous efforts, the topic "Research on Deep UV LED Fabrication and Application Technology" under the major project "Semiconductor Lighting Project" of the National 863 Program in the new materials technology field of the "11th Five-Year Plan" has achieved important breakthroughs in high-aluminum-composition material research and device applications.

　　Semiconductor deep-ultraviolet light sources have significant application value in fields such as lighting, sterilization, medical treatment, printing, biochemical detection, high-density information storage, and confidential communications. Deep UV LEDs with AlGaN material as the active region can emit light wavelengths covering the ultraviolet band of 210-365 nm, making it an ideal material for realizing deep UV LED device products in this band, with advantages unmatched by other traditional ultraviolet light sources.

　　With the support of the National 863 Program, the research team focused on conducting research on MOCVD-based deep UV LED materials and devices, emphasizing the solution of problems such as surface cracks in materials, poor crystal quality, low aluminum composition, inability to achieve short-wavelength emission, and structural material design. Breakthroughs were achieved in some key technologies, and high-crystal-quality crack-free high-aluminum-composition materials were obtained. On this basis, the project successfully fabricated deep UV LED devices below 300 nm for the first time in China, achieving milliwatt-level power output from the devices and developing deep UV sterilization modules, with a tested sterilization rate of over 95%.

(Responsible editor: zl)